View APTM100VDA35T3G_5029807.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTM100VDA35T3G
Dual Boost chopper MOSFET Power Module
VDSS = 1000V RDSon = 350m typ @ Tj = 25C ID = 22A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction (PFC) * Interleaved PFC Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration
16 15
28 27 26 25 29 30
23 22
20 19 18
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single boost of twice the current capability * RoHS Compliant Max ratings 1000 22 17 88 30 420 390 25 50 3000 Unit V
September, 2009 1-7 APTM100VDA35T3G- Rev 0
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
A V m W A mJ
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTM100VDA35T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V Tj = 25C Tj = 125C
Min
Typ
VGS = 10V, ID = 11A VGS = VDS, ID = 2.5mA VGS = 30V, VDS = 0V
350 3
Max 100 500 420 5 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 22A Inductive switching @ 125C VGS = 15V VBus = 670V ID = 22A RG = 5 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 22A, RG = 5 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 22A, RG = 5 Min Typ 5.2 0.88 0.16 186 24 122 18 12 155 40 900 623 1423 779 J J ns nC Max Unit nF
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 40A IF = 80A IF = 40A IF = 40A VR = 667V di/dt=200A/s Test Conditions VR=1000V Tj = 25C Tj = 125C Tc = 80C Min 1000 Typ Max 100 500 40 2.5 3.1 2 250 310 415 1650 3 V
September, 2009 2-7 APTM100VDA35T3G- Rev 0
Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
www.microsemi.com
APTM100VDA35T3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Chopper diode 4000 -40 -40 -40 2.5 Min Typ Max 0.32 1.2 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-7
APTM100VDA35T3G- Rev 0
September, 2009
17
28
APTM100VDA35T3G
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7 0.5 0.3
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 60 ID, Drain Current (A) ID, Drain Current (A) 50 40 30 20 10 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 11A 5.5V 5V VGS=15, 10&8V 7V
Transfert Characteristics 80 70 60 50 40 30 20 10 0 30 0 1 2 3 4 5
TJ=25C TJ=125C
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
6.5V
6V
TJ=-55C
6
7
8
9
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 25 20 15 10 5 0
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V VGS=20V
10
20
30
40
50
60
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (C)
www.microsemi.com
4-7
APTM100VDA35T3G- Rev 0
September, 2009
APTM100VDA35T3G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 100
limited by RDSon 100s VGS=10V ID=11A
TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0
10 Single pulse TJ=150C TC=25C 1 1
1ms
10ms
10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage ID=22A TJ=25C
VDS=200V VDS=500V VDS=800V
10000
Ciss
1000
Coss
Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
www.microsemi.com
5-7
APTM100VDA35T3G- Rev 0
September, 2009
50
100
150
200
250
APTM100VDA35T3G
Delay Times vs Current 180 160 td(on) and td(off) (ns) 140 tr and tf (ns) 120 100 80 60 40 20 0 0 10 20 30 40 50 ID, Drain Current (A) Switching Energy vs Current
VDS=670V RG=5 TJ=125C L=100H
Rise and Fall times vs Current 80 td(off) 70 60 50 40 30 20 10 0 0 10 20 30 40 ID, Drain Current (A) 50 tr
VDS=670V RG=5 TJ=125C L=100H
tf
td(on)
Switching Energy vs Gate Resistance 4 Switching Energy (mJ) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 Eoff Eon
VDS=670V ID=22A TJ=125C L=100H
2.5
Switching Energy (mJ)
2 1.5 1 0.5 0 0
VDS=670V RG=5 TJ=125C L=100H
Eon
Eoff
Eoff
10
20
30
40
50
ID, Drain Current (A) Operating Frequency vs Drain Current
ZVS
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000
250 225 200 Frequency (kHz) 175 150 125 100 75 50 25 0 5
ZCS
100
TJ=150C
VDS=670V D=50% RG=5 TJ=125C TC=75C
10
TJ=25C
Hard switching
1 VSD, Source to Drain Voltage (V)
September, 2009 6-7 APTM100VDA35T3G- Rev 0
8
10 13 15 18 ID, Drain Current (A)
20
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
www.microsemi.com
APTM100VDA35T3G
Typical chopper diode performance curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0 0.00001 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 80 trr, Reverse Recovery Time (ns) IF, Forward Current (A)
400 350 300 250 200 150 100 0
Trr vs. Current Rate of Charge
TJ=125C VR=667V
60
TJ=125C
40
80 A 40 A 20 A
20
TJ=25C
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge
TJ=125C VR=667V
200
400
600
800
1000 1200
-diF/dt (A/s) IRRM vs. Current Rate of Charge
TJ=125C VR=667V 80 A 20 A 40 A
QRR, Reverse Recovery Charge (C)
3
IRRM, Reverse Recovery Current (A)
4
80 A
40 30 20 10 0 0
40 A
2
20 A
1
0 0 200 400 600 800 1000 1200 -diF/dt (A/s)
200
400
600
800
1000 1200
-diF/dt (A/s)
Capacitance vs. Reverse Voltage 175 C, Capacitance (pF) 150 125 100 75 50
0 1 10 100 1000 VR, Reverse Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
7-7
APTM100VDA35T3G- Rev 0
September, 2009
25

▲Up To Search▲

Price & Availability of APTM100VDA35T3G

	To Download APTM100VDA35T3G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .